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10N60 MOSFET N-Channel (600V, 10A)
- New revolutionary high voltage technology
- Worldwide best RDS(on) in TO 247
- Ultra low gate charge
- Periodic avalanche rated
- Drain Current: ID= 10A at TC=25℃
- Drain Source Voltage: VDS = 600V
- Static Drain-Source On-Resistance: RDS(on) < 0.07 Ω
- Package: TO-247
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