10N60 MOSFET N-Channel (600V, 10A)

In Stock
EGP20.00
In Stock

Description

FEATURES:

  • New revolutionary high voltage technology
  • Worldwide best RDS(on) in TO 247
  • Ultra low gate charge
  • Periodic avalanche rated

SPECIFICATIONS:

  • Drain Current: ID= 10A at TC=25℃
  • Drain Source Voltage: VDS = 600V
  • Static Drain-Source On-Resistance: RDS(on) < 0.07 Ω
  • Package: TO-247

 

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