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FQA20N60 N-Channel MOSFET, 20 A, 600V, 3-Pin TO-3PN
Fairchild Semiconductors new QFET?
Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss).
By using advanced QFET? process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
Specifications:
| Attribute | Value |
| Channel Type | N |
| Maximum Continuous Drain Current | – continuous TC=25°C 19.5A
– continuous TC=100°C 12.3 |
| Maximum Drain Source Voltage | 600 V |
| Package Type | TO-3PN |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 70 m? |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 200 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Width | 5mm |
| Maximum Operating Temperature | +150 ?C |
| Length | 15.8mm |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 85 nC @ 10 V |
| Minimum Operating Temperature | -55 ?C |
| Height | 18.9mm |
| Series | QFET |
Package Includes:
- 1x FQA20N60 MOSFET
Datasheet:
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