IRF640 N-channel MOSFET (200V, 18A)

The IRF640 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in high-power switching and amplification applications. Below is the detailed datasheet-style information for the IRF640 MOSFET.

IRF640 N-Channel MOSFET Datasheet

General Description:

The IRF640 is a powerful N-channel MOSFET with high-voltage and high-current capabilities, designed for power switching applications. It's widely used in industrial, automotive, and power supply applications.

Key Specifications:

Parameter Value Type N-channel MOSFET Drain-Source Voltage (V_DS) 200V Gate-Source Voltage (V_GS) ±20V Continuous Drain Current (I_D) 18A Pulsed Drain Current (I_DM) 60A Total Power Dissipation (P_D) 80W Gate Threshold Voltage (V_GS(th)) 2V - 4V R_DS(on) (On-Resistance) 0.18Ω Gate Charge (Qg) 120nC Electrical Characteristics:

Parameter Test Conditions Value Drain-Source Voltage (V_DS) — 200V Gate-Source Voltage (V_GS) — ±20V Continuous Drain Current (I_D) T_A = 25°C 18A Pulsed Drain Current (I_DM) — 60A Gate Threshold Voltage (V_GS(th)) V_DS = V_GS, I_D = 250µA 2V - 4V On-Resistance (R_DS(on)) V_GS = 10V, I_D = 10A 0.18Ω Gate-Source Leakage Current (I_GS) V_GS = ±20V ±100nA Drain-Source Leakage Current (I_DSS) V_DS = 200V, V_GS = 0V 1µA (Max) Total Gate Charge (Qg) V_DS = 100V, V_GS = 10V 120nC Gate-Source Leakage Current (I_GS) V_GS = ±20V ±100nA Thermal Characteristics:

Parameter Value Junction-to-Case Thermal Resistance (R_θJC) 1.0°C/W Junction-to-Ambient Thermal Resistance (R_θJA) 62.5°C/W Maximum Junction Temperature (T_J) 150°C Storage Temperature Range (T_stg) -55°C to +150°C Package Information:

• Package Type: TO-220

1. Pin Configuration (TO-220):Gate (G): Control terminal for switching the MOSFET on/off.
2. Drain (D): The main current-carrying terminal, connected to the load.
3. Source (S): The terminal connected to the reference or ground.

• Mounting Type: Through-hole
• Weight: Approx. 2.5g

Application Notes:

The IRF640 is ideal for high-power, high-voltage switching applications. It is widely used in:

• Power Supplies: As a switching element in SMPS (Switched-Mode Power Supplies).
• DC-DC Converters: Used for high-current power conversion applications.
• Motor Drivers: Control of DC motors and stepper motors.
• Amplifiers: Audio amplifiers or other power amplifiers.
• Automotive Applications: Power control circuits and inverters.

Advantages:

• Low On-Resistance: Ensures efficient switching with minimal power loss during operation.
• High Current Handling: Capable of handling up to 18A continuously with low thermal dissipation.
• Low Gate Charge: Enables fast switching, making it suitable for high-speed applications.
• High Voltage Rating: Can operate at up to 200V drain-source voltage.

Safety and Handling:

• Thermal Management: It is essential to use a heatsink when operating near maximum power dissipation values (especially for high-current switching).
• ESD Protection: Handle with care to avoid electrostatic discharge (ESD) damage to the gate.
• Proper Gate Drive: Ensure that the gate voltage is properly controlled to avoid overdriving the gate and causing damage.