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IRF640 N-channel MOSFET (200V, 18A) Original
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EGP25.00
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Description
The IRF640 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in high-power switching and amplification applications. Below is the detailed datasheet-style information for the IRF640 MOSFET.
IRF640 N-Channel MOSFET Datasheet
General Description:
The IRF640 is a powerful N-channel MOSFET with high-voltage and high-current capabilities, designed for power switching applications. It’s widely used in industrial, automotive, and power supply applications.
Key Specifications:
| Parameter | Value |
|---|---|
| Type | N-channel MOSFET |
| Drain-Source Voltage (V_DS) | 200V |
| Gate-Source Voltage (V_GS) | ±20V |
| Continuous Drain Current (I_D) | 18A |
| Pulsed Drain Current (I_DM) | 60A |
| Total Power Dissipation (P_D) | 80W |
| Gate Threshold Voltage (V_GS(th)) | 2V – 4V |
| R_DS(on) (On-Resistance) | 0.18Ω |
| Gate Charge (Qg) | 120nC |
Electrical Characteristics:
| Parameter | Test Conditions | Value |
|---|---|---|
| Drain-Source Voltage (V_DS) | — | 200V |
| Gate-Source Voltage (V_GS) | — | ±20V |
| Continuous Drain Current (I_D) | T_A = 25°C | 18A |
| Pulsed Drain Current (I_DM) | — | 60A |
| Gate Threshold Voltage (V_GS(th)) | V_DS = V_GS, I_D = 250µA | 2V – 4V |
| On-Resistance (R_DS(on)) | V_GS = 10V, I_D = 10A | 0.18Ω |
| Gate-Source Leakage Current (I_GS) | V_GS = ±20V | ±100nA |
| Drain-Source Leakage Current (I_DSS) | V_DS = 200V, V_GS = 0V | 1µA (Max) |
| Total Gate Charge (Qg) | V_DS = 100V, V_GS = 10V | 120nC |
| Gate-Source Leakage Current (I_GS) | V_GS = ±20V | ±100nA |
Thermal Characteristics:
| Parameter | Value |
|---|---|
| Junction-to-Case Thermal Resistance (R_θJC) | 1.0°C/W |
| Junction-to-Ambient Thermal Resistance (R_θJA) | 62.5°C/W |
| Maximum Junction Temperature (T_J) | 150°C |
| Storage Temperature Range (T_stg) | -55°C to +150°C |
Package Information:
- Package Type: TO-220
- Pin Configuration (TO-220):
- Gate (G): Control terminal for switching the MOSFET on/off.
- Drain (D): The main current-carrying terminal, connected to the load.
- Source (S): The terminal connected to the reference or ground.
- Mounting Type: Through-hole
- Weight: Approx. 2.5g
Application Notes:
The IRF640 is ideal for high-power, high-voltage switching applications. It is widely used in:
- Power Supplies: As a switching element in SMPS (Switched-Mode Power Supplies).
- DC-DC Converters: Used for high-current power conversion applications.
- Motor Drivers: Control of DC motors and stepper motors.
- Amplifiers: Audio amplifiers or other power amplifiers.
- Automotive Applications: Power control circuits and inverters.
Advantages:
- Low On-Resistance: Ensures efficient switching with minimal power loss during operation.
- High Current Handling: Capable of handling up to 18A continuously with low thermal dissipation.
- Low Gate Charge: Enables fast switching, making it suitable for high-speed applications.
- High Voltage Rating: Can operate at up to 200V drain-source voltage.
Safety and Handling:
- Thermal Management: It is essential to use a heatsink when operating near maximum power dissipation values (especially for high-current switching).
- ESD Protection: Handle with care to avoid electrostatic discharge (ESD) damage to the gate.
- Proper Gate Drive: Ensure that the gate voltage is properly controlled to avoid overdriving the gate and causing damage.
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