Description

IRLB3034 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRLB3034

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 375 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 343 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 108 nC

Rise Time (tr): 827 nS

Drain-Source Capacitance (Cd): 1980 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0017 Ohm

Package: TO220AB