Description

KF4N20LD MOSFET.

Type Designator: KF4N20LD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 31 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 3.6 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 20 nS
Drain-Source Capacitance (Cd): 25 pF
Maximum Drain-Source On-State Resistance (Rds): 0.89 Ohm

DataSheet :
KF4N20LD