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TIP35C NPN Bipolar Power Transistor (25A-100V )


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10.00EGP

Characteristics of the TIP35C bipolar transistor

  • Type – NPN
  • Collector-Emitter Voltage: 100 V
  • Collector-Base Voltage: 100 V
  • Emitter-Base Voltage: 5 V
  • Collector Current: 25 A
  • Collector Dissipation – 125 W
  • DC Current Gain (hfe) – 15 to 75
  • Transition Frequency – 3 MHz
  • Operating and Storage Junction Temperature Range -65 to +150 °C
  • Package – TO-247

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