2N5401 (2L) MMBT5401 (160 V, 500 mA) PNP SMD Transistors SOT-23

Description

MMBT5401 2L SOT23-3 2N5401 SMD PNP high voltage transistor

Specifications:

Type Designator: GSTMMBT5401
SMD Transistor Code: 2L
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 60

Package Content:
1pcs MMBT5401 2L SOT23-3 SMD transistor