Description

(HM3401A ) P-Channel Enhancement Mode Field Effect Transistor

The 3401A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications

Type Designator: 3401A
Marking Code: 3401A
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ – Maximum Power Dissipation: 1.3 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 1.3 V
|Id| ⓘ – Maximum Drain Current: 4.4 A
Tj ⓘ – Maximum Junction Temperature: 150 °C
Qg ⓘ – Total Gate Charge: 9.5 nC
tr ⓘ – Rise Time: 3 nS
Cossⓘ – Output Capacitance: 115 pF
Rds ⓘ – Maximum Drain-Source On-State Resistance: 0.052 Ohm
Package: SOT23
datasheet :

https://alltransistors.com/adv/pdfview.php?doc=3401a.pdf&dire=_goford