Original IRF1407 MOSFET N-Ch (75V, 130A)

IRF1407 is Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.

These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Features:-

• Advanced process technology
• Ultra low on-resistance
• Dynamic dv/dt rating
• Fast switching
• Repetitive avalanche allowed up to Tjmax

Detailed Specifications:-

Number of Channels 1 Channel Transistor Polarity N-Channel Drain-Source Breakdown Voltage (Vds) 75V Continuous Drain Current (Id) 130A Drain-Source Resistance (Rds On) 7.8mOhms Gate-Source Voltage (Vgs) 20V Gate Charge (Qg) 250 nC Operating Temperature Range -55 – 175°C Power Dissipation (Pd) 330W Related Documents

 IRF1407 MOSFET Datasheet