RSQ035P03TR

Type Designator: RSQ035P03

Marking Code: TM

Type of Transistor: MOSFET Type of Control Channel: P -Channel

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Qg ⓘ - Total Gate Charge: 9.2 nC

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 180 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: TSMT6

Features

1- Low On-resistance.(65mΩ at 4.5V)

2- High Power Package.

3- High speed switching.

4- Low voltage drive. (4V) Applications DC-DC converter Datasheet: https://alltransistors.com/adv/pdfview.php?doc=rsq035p03.pdf&dire=_rohm