24N60M2 MOSFET N-channel (650V,18A ,0.168Ω) Original
SKU: woo-39888
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EGP 35.00
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Description
Description :
This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics,rendering it suitable for the most demanding highefficiency converters.
The TO-220FP wide creepage package provides increased surface insulation for Power MOSFETs to prevent failure due to arcing, which can occur in polluted environments
Features:
-Extremely low gate charge
-Excellent output capacitance (COSS) profile
-100% avalanche tested
-Zener-protected
-Zener-protected
-Wide creepage distance of 4.25 mmbetween the pins
Applications:
- Switching applications
- LLC converters, resonant converters
DataSheet :
https://pdf1.alldatasheet.net/datasheet-pdf/view/931307/STMICROELECTRONICS/STFH24N60M2.html
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