(O3407A )P-Channel Enhancement Mode Field Effect Transistor

Type Designator: AO3407A

Marking Code: X7*

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Pdⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V

|Id|ⓘ - Maximum Drain Current: 4.3 A

Tjⓘ - Maximum Junction Temperature: 150 °C

Qgⓘ - Total Gate Charge: 9.2 nC

trⓘ - Rise Time: 5.5 nS Cossⓘ -

Output Capacitance: 100 pF

Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm

Package: SOT23

datasheet : https://pl-1.org/getproductfile.axd?id=12476&filename=AO3407.pdf