(AO3435 )P-Channel Enhancement Mode Field Effect Transistor

Type Designator: AO3435 Type of Transistor: MOSFET Type of Control Channel: P -Channel Pdⓘ - Maximum Power Dissipation: 1 W |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V |Id|ⓘ - Maximum Drain Current: 2.9 A Tjⓘ - Maximum Junction Temperature: 150 °C Qgⓘ - Total Gate Charge: 5.6 nC trⓘ - Rise Time: 10 nS Cossⓘ - Output Capacitance: 70 pF Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm Package: SOT23   datasheet : https://alltransistors.com/adv/pdfview.php?doc=ao3435.pdf&dire=_aosemihttps://pl-1.org/getproductfile.axd?id=12476&filename=AO3407.pdf