Description

(AO3435 )P-Channel Enhancement Mode Field Effect Transistor

Type Designator: AO3435
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ – Maximum Power Dissipation: 1 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ – Maximum Drain Current: 2.9 A
Tjⓘ – Maximum Junction Temperature: 150 °C
Qgⓘ – Total Gate Charge: 5.6 nC
trⓘ – Rise Time: 10 nS
Cossⓘ – Output Capacitance: 70 pF
Rdsⓘ – Maximum Drain-Source On-State Resistance: 0.056 Ohm
Package: SOT23

datasheet :

https://alltransistors.com/adv/pdfview.php?doc=ao3435.pdf&dire=_aosemihttps://pl-1.org/getproductfile.axd?id=12476&filename=AO3407.pdf